We investigate current fluctuations in non-degenerate semiconductors, onlength scales intermediate between the elastic and inelastic mean free paths.We present an exact solution of the non-linear kinetic equations in the regimeof space-charge limited conduction, without resorting to the driftapproximation of previous work. By including the effects of a finite voltageand carrier density in the contact region, a quantitative agreement is obtainedwith Monte Carlo simulations by Gonz{\'a}lez et al., for a model of anenergy-independent elastic scattering rate. The shot-noise power $P$ issuppressed below the Poisson value $P_{Poisson}=2e\bar I$ (at mean current$\bar I$) by the Coulomb repulsion of the carriers. The exact suppressionfactor is close to 1/3 in a three-dimensional system, in agreement with thesimulations and with the drift approximation. Including an energy dependence ofthe scattering rate has a small effect on the suppression factor for the caseof short-range scattering by uncharged impurities or quasi-elastic scatteringby acoustic phonons. Long-range scattering by charged impurities remains anopen problem.
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机译:我们研究了非退化半导体的电流波动,介于弹性和非弹性平均自由程之间的长尺度。我们提出了在空间电荷受限传导机制中非线性动力学方程的精确解,而无需借助先前的漂移近似工作。通过在接触区域中包括有限电压和载流子密度的影响,可以通过Gonz {'a} lez等人的Monte Carlo模拟获得与能量无关的弹性散射速率模型的定量协议。通过载波的库仑排斥力将散粒噪声功率$ P $抑制在泊松值$ P_ {Poisson} = 2e \ bar I $(平均当前$ \ bar I $)以下。与仿真和漂移近似一致,在三维系统中,精确的抑制因子接近1/3。对于不带电杂质的短程散射或声子的准弹性散射,包括散射速率的能量依赖性对抑制因子的影响很小。带电杂质的远距离散射仍然是一个未解决的问题。
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